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20 10.0 5.0V 15
15 Vds=5V 10
Id (A)
Id (A)
4.5V 10 4.0V 5
125C
5 25C
Vgs=3.5V 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 0 2 2.5 3 3.5 4 4.5 5 Vgs (Volts) Figure 2: Transfer Characteristics 2
100
Normalized On-Resistance
90 80
Vgs=10V 1.8 Id=4.5A 1.6 Vgs=4.5V 1.4 1.2 1 0.8 Id=3.0A
Rds(on) (m:)
70 60 50 40 30 20 0 5
Vgs=4.5V
Vgs=10V
10
15
20
0
25
50
75
100
125
150
175
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
160 140 Id=4.5A
1.0E+01 1.0E+00 1.0E-01 125C 125C
Rds(on) (m:)
120
Is (A)
100 80
1.0E-02 1.0E-03 25C
25C 60 40 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics
10 8 Vds=30V Id= 4.5A
800
Capacitance (pF)
600 Ciss 400 Coss Crss 0
Vgs (Volts)
6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 Qg (nC) Figure 7: Gate-Charge Characteristics
200
0
10
20
30
40
50
60
Vds (Volts) Figure 8: Capacitance Characteristics
100.0 Rds(on) limited 100Ps 10.0 10ms 1s 1.0 Tj(max.)=150C Ta=25C 0.1 0.1 1 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 1ms
40 10Ps Tj(max.)=150C Ta=25C 30
Id (Amps)
Power (W)
20
10
0 0.001
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
10
ZTja Normalized Transient Thermal Resistance
D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance

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